Product Summary
The BTS723GW’s N channel vertical power MOSFET is with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS 80V technology. It provides embedded protective functions. An array of resistors is integrated in order to reduce the external components.
Parametrics
Absolute maximum ratings: (1)Supply voltage (overvoltage protection): 58 V; (2)Supply voltage for full short circuit protection Tj,start =-40 to +150°C: 50 V; (3)Output Voltage to Vbb: 70 V; (4)Negative voltage slope at output: 20 V/μs; (5)Load current (Short-circuit current): IL(LIM) A; (6)Load dump protection VLoadDump = VA + Vs, VA = 27 V, RI = 8 Ω, td = 200 ms; IN= low or high, each channel loaded with RL = 20 Ω: 70 V; (7)Operating temperature range: -40 to +150 ℃; (8)Storage temperature range: -55 to +150 ℃; (9)Power dissipation (DC): Ta = 25°C: 3.0 W, (all channels active) Ta = 85°C: 1.6 W; (10)Maximal switchable inductance, single pulse Vbb =12V, Tj,start =150°C, IL = 2.5 A, EAS = 110 mJ, 0Ω one channel: 23.0mH, IL = 3.5 A, EAS = 278 mJ, 0Ω two parallel channels: 30.0 mH; (11)Electrostatic discharge capability (ESD): 1.0 kV; (12)Input voltage (DC): ±42 V; (13)Current through input pin (DC): ±2.0 mA; (14)Current through status pin (DC): ±2.0 mA; (15)Status pull up voltage: ±42 V.
Features
Features: (1)CMOS compatible input; (2)Improved electromagnetic compatibility (EMC); (3)Fast demagnetization of inductive loads; (4)Stable behaviour at undervoltage; (5)Wide operating voltage range; (6)Logic ground independent from load ground; (7)Optimized inverscurrent capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BTS723GW |
Infineon Technologies |
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