Product Summary
The BTS711L1’s N channel vertical power FET is with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOSâ technology. It is fully protected by embedded protection functions.
Parametrics
Absolute maximum ratings: (1)Load current (Short-circuit current): self-limited A; (2)Load dump protection VLoadDump = UA + Vs, UA = 13.5 V, RI = 2W, td = 200 ms; IN = low or high, each channel loaded with RL = 7.1Ω: 60 V; (3)Operating temperature range: -40 to +150℃; (4)Storage temperature range: -55 to +150℃; (5)Power dissipation (DC) Ta = 25℃: 3.6 W, (all channels active) Ta = 85℃: 1.9 W; (6)Inductive load switch-off energy dissipation, single pulse Vbb =12V, Tj,start =150°C, IL = 1.9 A, ZL = 66 mH, 0W one channel: 150mJ, IL = 2.8 A, ZL = 66 mH, 0W two parallel channels: 320mJ, IL = 4.4 A, ZL = 66 mH, 0W four parallel channels: 800mJ; (7)Electrostatic discharge capability (ESD) (Human Body Model): 1.0 kV; (8)Input voltage (DC): -10 to +16 V; (9)Current through input pin (DC): ±2.0 mA; (10)Current through status pin (DC): ±5.0 mA; (11)Thermal resistance: junction - soldering point each channel: 16 K/W; (12)junction - ambient one channel active: 44 K/W; (13)all channels active: 35 K/W.
Features
Features: (1)Overload protection; (2)Current limitation; (3)Short-circuit protection; (4)Thermal shutdown; (5)Overvoltage protection (including load dump); (6)Fast demagnetization of inductive loads; (7)Reverse battery protection1); (8)Undervoltage and overvoltage shutdown with auto-restart and hysteresis; (9)Open drain diagnostic output; (10)Open load detection in ON-state; (11)CMOS compatible input; (12)Loss of ground and loss of Vbb protection; (13)Electrostatic discharge (ESD) protection.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BTS711L1 |
Infineon Technologies |
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Data Sheet |
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